Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devicescovers all aspects relating to the structural and electrical properties of HfO2and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications, including non-volatile memories, negative capacitance field-effect-transistors, energy storage, harvesting, and solid-state cooling. Fundamentals of ferroelectric and piezoelectric properties, HfO2processes, and the impact of dopants on ferroelectric properties are also extensively discussed in the book, along with phase transition, switching kinetics, epitaxial growth, thickness scaling, and more. Additional chapters consider the modeling of ferroelectric phase transformation, structural characterization, and the differences and similarities between HFO2and standard ferroelectric materials. Finally, HfO2based devices are summarized. Explores all aspects of the structural and electrical properties of HfO2, including processes, modelling and implementation into semiconductor devicesConsiders potential applications including FeCaps, FeFETs, NCFETs, FTJs and moreProvides comparison of an emerging ferroelectric material to conventional ferroelectric materials with insights to the problems of downscaling that conventional ferroelectrics face | Ferroelectricity in Doped Hafnium Oxide by Uwe Schroeder, Paperback | Indigo Chapters